Cvd Graphene Copper Etching

For the fecl 3 etchant we found that the average size of the.

Cvd graphene copper etching.

Advanced materials 2016 28 29 6247 6252. The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil. 2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant. In addition we found that the etching is temperature dependent.

Here to investigate the size and density of the graphene domains the cvd growth of graphene was terminated by stopping the ch 4 feedstock prior to covering the entire cu surface. Synthesis of graphene films on copper foils by chemical vapor deposition. By exposing cvd graphene on copper foil to hydrogen flow around 800 c we observed that the initially continuous graphene can be etched to have many hexagonal openings. Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions.

Graphene grown on copper by chemical vapor deposition cvd has been significantly explored for the synthesis of high quality graphene since the popular recipe for single layer graphene growth was introduced in 2009 1 many years after the first report of the deposition of graphene on cu in 1992 2. If the raman spectra of bilayer graphene transferred to pet wafer is compared to that the one of bilayer graphene on copper figure 2 a it can be concluded that the different transfer steps affected the.